switching diode features z fast switching speed z for general purpose switching applications z high conductance marking :t3 maximum ratings @ta =25 parameter symbol limit unit peak repetitive peak reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 250 v forward continuous current i fm 400 ma average rectified output current i o 200 ma non-repetitive peak forward surge current @ t = 1.0s @ t = 1.0s i fsm 2.5 0.5 a power dissipation p d 150 mw thermal resistance junction to ambient r ja 833 /w operating junction temperature t j 150 storage temperature t stg -55~+ 150 electrical characteristics (ta=25 unless otherwise specified) parameter symbol test conditions m in max unit reverse breakdown voltage v (br) i r = 100 a 25 0 v reverse voltage leakage current i r v r =200v 100 na forward voltage v f i f =100ma i f =200ma 1 1.25 v total capacitance c t v r =0v,f=1mhz 5 pf reverse recovery time t r r i f =i r =30ma,i rr =0.1xi r , r l =100 ? 50 n s sot-523 1 2 3 z 2012-1 willas electronic corp. sot-523 plastic-encapsulate diodes BAS21T z preliminary
outline drawing dimensions in inches and (millimeters) sot-523 rev.d .043(1.10) .035(0.90) .069(1.75) .057(1.45) .004(0.10)min. .008(0.20) .004(0.10) .035(0.90) .028(0.70) .006(0.15) .014(0.35) .004(0.10)max. .067(1.70) .059(1.50) .035(0.90) .028(0.70) .014(0.35) .010(0.25) 2012-1 willas electronic corp. sot-523 plastic-encapsulate diodes BAS21T preliminary
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